Drift Velocity of Holes Formula |
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\( v_d \;=\; \mu_h \cdot E \) (Drift Velocity of Holes) \( \mu_h \;=\; \dfrac{ v_d }{ E }\) \( E \;=\; \dfrac{ v_d }{ \mu_h }\) |
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| Symbol | English | Metric |
| \( v_d \) = Drift Velocity of Holes | \( ft\;/\; sec\) | \(m \;/\;s\) |
| \( \mu_h \) (Greek symbol mu) = Hole Mobility | \(ft^2\;/\;V-ses\) | \(m^2\;/\;V-s\) |
| \( E \) = Electrical Field Strength | \(V\;/\;ft\) | \(V\;/\;m\) |
Drift velocity of holes is the average velocity at which positive charge carriers, called holes, move through a semiconductor material when subjected to an external electric field. In a semiconductor, a hole represents the absence of an electron in the valence band, and it behaves like a positively charged particle. When an electric field is applied, holes appear to move in the direction of the field, opposite to the actual motion of electrons filling the vacant states. The drift velocity of holes is typically quite small, due to frequent collisions with lattice atoms, impurities, and other carriers, which impede their motion. This concept is fundamental in understanding the behavior of p-type semiconductors, current conduction, and the performance of electronic devices such as diodes and transistors.
